Tóm tắt

Zinc oxy-selenide (Zn(O,Se)) is a prospective semiconductor that could be applied as a buffer layer in optornelectronic devices as an alternative for toxic CdS layers. A complete investigation of the effect of changing laserrnfluences from 4 to 6 J cm− 2 on the phase composition,optical and electrical properties of Zn(O,Se) films preparedrnby pulsed laser deposition in a high vacuum at 500◦C is reported. Deposited Zn(O,Se) films were characterizedrnusing HR-SEM, XRD, UV–Vis, and Hall effect measurements. HR-SEM micrographs illustrated the deposition ofrnuniform, adherent, and compact Zn(O,Se) films. XRD investigation confirmed the formation of a Zn(O,Se) phasernat 500◦C for all three laser fluences. In addition, the UV–Vis transmittance spectra indicated the relativerntransparency of the deposited films in the visible range, accompanied by a redshift in the absorption edges as thernlaser fluences increased. Electrical measurements showed a significant increase of the electron concentration andrnelectrical conductivity in the obtained films as laser fluence increased to 6 J cm− 2.