Tóm tắt

CdS as an n–type layer plays an important role in the fabrication of solar cells. Cd1-xCoxS thin-films withrnvariable Co doping levels (x = 0 to 0.06) were deposited on glass and indium tin oxide-coated (ITO) glassrnsubstrates by simple and inexpensive chemical bath deposition. The effects of Co doping on the struc-tural, optical, morphological, elemental, and vibrational properties of CdS films were systematicallyrnexamined. XRD results revealed that Co concentrations increase and the crystallite size of the filmrndecreases from 20.4 to 13.6 nm due to the incorporation Co in Cd sites. The optical bandgap was reducedrnfrom 2.44 to 2.32 eV due to the incorporation of Co, which was found with a UV–Vis spectrophotometer.rnUrbach energy, refractive index and extinction coefficient of all deposited films was estimated, and thernresults were discussed. The intensity of PL peaks was reduced by increasing the Co concentration inrnthe red region. The resistivity and carrier concentration were measured from Hall measurement systemrnand the film current density was increased from 7 to 26 mA/cmrn2rnby cobalt doping.