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Loại tài liệu: Tài liệu số - Journal article
Thông tin trách nhiệm: Ken-ichi Fukumoto, Hideki Matsui, Hideaki Ohkubo, Zheng Tang, Yasuyoshi Nagai, Masayuki Hasegawa
Nhà Xuất Bản: Elsevier B.V
Năm Xuất Bản: 2007
Irradiation-induced Ti-rich precipitates in V–Ti and V–4Cr–4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Tirnat irradiation temperatures below 300 u0002C have not been identified by TEM techniques. Strong interaction between vacancy and Ti soluternatoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 u0002C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It isrnsuggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Tirnat irradiation temperatures below 300 u0002C.
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