Tóm tắt

InGaAsP based technologies are more favorable due to its unique monolithic integrated nature. For an efficientrnelectro-optical device structure, there is a keen interest to develop active and passive components to suffice thernneeds of monolithic platform. Thus, carrier’s transport and removal regions are carefully fabricated with lowrnoptical and electronic signal loss in order to optimize the signal to noise ratio (SNR) to effectively producernmonolithic chip. In this specialized study we have provided an insight about the effective multi-implant ionrnassisted carrier removal capability of the highly conductive epitaxially grown InGaAsP/InP device matrix asrnPIC’s substrate. For this multi-implant strategy has been adopted with C+ and Ni+ ions implanted separately.rnTheir dosage’s along with ion energies are simulated rigorously before the actual implantations. Post implantrnmeasurements of Sheet resistance, mobility, drift driven electric fields, current-voltage, Arrhenius based actirnvation energies, charge based transient analysis and detailed investigations of traps have been performed tornstudy the viability of carrier removal scheme for the stable as well as reversible electrical isolation of thisrnphotonic integrated circuit’s platform.Trap parameters identified as a result of a specialized charge deep levelrntransient spectroscopy provides an insight about the energy levels and possible evaluation of recombination/rngeneration centers for effective photonic activity within the device regions. The optical loss study has beenrnperformed to inspect the optical hindrance levels into the said InGaAsP PIC matrix.