Tóm tắt

ZnO thin films were synthesized from precursors of different concentrations via aerosol assisted chemical vapourrndeposition (AACVD) on glass substrates at 400 ◦C and were sintered in vacuum at 500◦C. The effect of thernprecursor concentration and vacuum sintering on the film growth and optoelectronic properties was investigated.rnWith the precursor concentration increasing, the films grew preferentially along the (002) plane at 0.1 M prerncursor and then became fully polycrystalline. From images of scanning electron microscopy (SEM), it can bernobserved that the grain size became larger but simultaneously the particles were physically separate. The lowestrnelectrical resistivity (6.38 Ωcm) was gained at films of (002) preferred orientation and the optical transparency inrnthe visible light range was as high as 82.5%. After sintering, the resistivity of both 0.05 and 0.1 M thin filmsrndecreased to 19.04 and 2.28 Ωcm, respectively whist the transparency almost remained unchanged. Thernimprovement of electrical property could be attributed to the better crystallinity and the enlarged grain size,rnwhich significantly reduced the scattering of grain boundaries to free electrons.